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[1]谢生,谷由之,毛陆虹,等.基于SiGe BiCMOS工艺的高速光接收机模拟前端电路[J].天津大学学报(自然科学版),2018,(01):57-63.[doi:10.11784/tdxbz201612053]
 Xie Sheng,Gu Youzhi,Mao Luhong,et al.Analog Front-End Circuit for High-Speed Optical Receiver Based on SiGe BiCMOS Technology[J].Journal of Tianjin University,2018,(01):57-63.[doi:10.11784/tdxbz201612053]

基于SiGe BiCMOS工艺的高速光接收机模拟前端电路


[1] Youn J S, Lee M J, Park K Y, et al. A 12. 5-Gb/s SiGe BiCMOS optical receiver with a monolithically integrated 850-nm avalanche photodetector[C]// Optical Fiber Communication Conference. Los Angeles, California, USA, 2012:1-3.
[2] Toru Y, Toshiaki T, Norio C, et al. A 20 Gbps inductorless CMOS optical receiver for short distance VCSEL based 850 nm optical links[J]. Analog Integrated Circuits and Signal Processing, 2014, 78(1):43-51.
[3] Oh W S, Park K. A 12-Channel 60-Gb/s transimpedance amplifier and limiting amplifier array for OPCB applications[C]//IEEE International Conference on Electronics. Marrakech, Morocco, 2008:22-25.
[4] Xie Sheng, Guo Jing, Guan Kun, et al. Design and realization of InP/AlGaInAs multiple quantum well ring laser[J]. Transactions of Tianjin University, 2014, 20(6):402-406.
[5] Huang J C, Lai K S, Hsu K Y J. A 10. 5 Gb/s transimpedance amplifier using capacitive emitter degeneration technique[J]. Solid-State Electronics, 2009, 53(8):
[6] Moeneclaey B, Verbrugghe J, Blache F, et al. A 40 Gb/s transimpedance amplifier for optical links[J]. IEEE Photonics Technology Letters, 2015, 27(13):1375-1378.
[7] Brandl P, Zimmermann H. 3 Gbit/s optical receiver IC with high sensitivity and large integrated pin photodiode [J]. Electronics Letters, 2013, 49(8):552-554.
[8] Eissa M H, Awny A, Winzer G, et al. A wideband monolithically integrated photonic receiver in 0.25 ?m SiGe:C BiCMOS technology[C]// European Solid-State Circuits Conference. Lausanne, Switzerland, 2016:487-490.
[9] Xie Sheng, Tao Xizi, Mao Luhong, et al. A high-Gm differential regulated cascode transimpedance amplifier [J]. Transactions of Tianjin University, 2016, 22(4):345-351.
[10] Kang Y Z, Mao L H, Zhang S L, et al. A 13 GHz 38 mW differential front-end amplifier based on 0.18 μm SiGe BiCMOS for 15 Gb/s optical receiver [C] // IEEE International Conference on Solid-State and Integrated Circuit Technology. Xi’an, China, 2012:1-3.
[11] Chen L, Li Z, Wang Z. A 10-Gb/s Inductorless CMOS limiting amplifier for optic-fiber transmission system [C]// IEEE Photonics and Optoelectronic. Chengdu, China, 2010:1-4.
[12] Holdenried C D, Haslett J W, Lynch M W. Analysis and design of HBT Cherry-Hooper amplifiers with emitter-follower feedback for optical communications[J]. IEEE Journal of Solid-State Circuits, 2004, 39(11):1959-1967.
[13] Huang H Y, Chien J C, Lu L H. A 10-Gb/s inductor-less CMOS limiting amplifier with third-order interleaving active feedback[J]. IEEE Journal of Solid-State Circuits, 2007, 42(5):1111-1120.


[1]谢生,高谦,毛陆虹,等.2.5 Gb/s低噪声差分交叉耦合跨阻放大器的设计与实现[J].天津大学学报(自然科学版),2017,(06):656.[doi:10.11784/tdxbz201605045]
 Xie Sheng,Gao Qian,Mao Luhong,et al.A Novel 2.5 Gb/s Low Noise Differential Cross-Coupled Transimpedance Amplifier[J].Journal of Tianjin University,2017,(01):656.[doi:10.11784/tdxbz201605045]


收稿日期: 2016-12-20; 修回日期: 2017-05-25.
作者简介: 谢生(1978—), 男, 博士, 副教授.
通讯作者: 谢生, xie_sheng06@tju.edu.cn.
基金项目: 国家自然科学基金资助项目(61474081).
Supported by the National Nature Science Foundation of China(No.,61474081).

更新日期/Last Update: 2018-01-10