|本期目录/Table of Contents|

 Formation of subsurface cracks in silicon wafers by grinding(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2018年3期
页码:
172-179
栏目:
出版日期:
2018-09-15

文章信息/Info

Title:
 Formation of subsurface cracks in silicon wafers by grinding
作者:
Jingfei Yin a Qian Bai a Yinnan Li a Bi Zhang b*
Author(s):
 Jingfei Yin a Qian Bai a Yinnan Li a Bi Zhang b*
a Key Laboratory for Precision and Non-traditional Machining of Ministry of Education, Dalian University of Technology, Dalian 116024, China
b College of Engineering, Southern University of Science and Technology, Shenzhen 518055, China
关键词:
-
Keywords:
Silicon wafer
Subsurface crack
Cleavage
Inclination angle
Thermal energy
分类号:
-
DOI:
-
文献标识码:
A
摘要:
-
Abstract:
 Single-crystal silicon is an important material in the semiconductor and optical industries. However, being hard
and brittle, a silicon wafer is vulnerable to subsurface cracks (SSCs) during grinding, which is detrimental to the
performance and lifetime of a wafer product. Therefore, studying the formation of SSCs is important for optimizing
SSC-removal processes and thus improving surface integrity. In this study, a statistical method is used to
study the formation of SSCs induced during grinding of silicon wafers. The statistical results show that
grinding-induced SSCs are not stochastic but anisotropic in their distributions. Generally, when grinding with
coarse abrasive grains, SSCs formalong the cleavage planes, primarily the {111} planes. However, when grinding
with finer abrasive grains, SSCs tend to form along planes with a fracture-surface energy higher than that of the
cleavage planes. These findings provide a guidance for the accurate detection of SSCs in ground silicon wafers.

参考文献/References

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备注/Memo

备注/Memo:
 * Corresponding author.
E-mail address: zhangb@sustc.edu.cn (B. Zhang).
https://doi.org/10.1016/j.npe.2018.09.003
1672-6030/? 2018 Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
更新日期/Last Update: 2018-12-27