|本期目录/Table of Contents|

兆声化学机械复合抛光及其抛光均匀性的实现(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2017年6期
页码:
538-544
栏目:
出版日期:
2017-11-15

文章信息/Info

Title:
Realization of Polishing Uniformity in Megasonic Vibration Assisted Chemical Mechanical Polishing
文章编号:
1672-6030(2017)06-0538-07
作者:
翟科1 任奕1 李亮2 何勍1
1.辽宁工业大学振动工程研究所, 锦州 121001; 2. 辽宁工业大学理学院, 锦州 121001
Author(s):
Zhai Ke1 Ren Yi1 Li Liang2 He Qing1
1. Institute of Vibration Engineering, Liaoning University of Technology, Jinzhou 121001, China; 2. College of Science, Liaoning University of Technology, Jinzhou 121001, China
关键词:
兆声 化学机械抛光 硅片 均匀性
Keywords:
megasonic chemical mechanical polishing silicon wafer uniformity
分类号:
TN305.2
DOI:
10.13494/j.npe.20160015
文献标识码:
A
摘要:
在匹配层结构压电换能器的基础上,通过对兆声压电振子的振动模式进行控制,在横向尺度上实现了兆声抛光工具头振动振幅的均匀化,进而开展了有/无兆声作用下硅片的化学机械抛光实验.抛光后,无兆声作用硅片的表面粗糙度Ra均值达到0.072 μm,兆声作用硅片的表面粗糙度Ra均值达到0.020 μm.测量了被抛光硅片的平面度,相对于无兆声作用硅片的平面度的PV值28 μm,兆声作用硅片PV值显著下降,为21 μm.可见,相对于传统化学机械抛光,兆声化学机械复合抛光能够有效地改善原有抛光工艺,提高硅片抛光表面质量,实现其抛光均匀性.
Abstract:
To obtain the uniform vibration amplitude of megasonic polishing tools in transverse direction, the matching layer structure of megasonic polishing vibrator was adopted and the vibration mode of the piezoelectric vibrator was controlled. Silicon wafers were polished with megasonic vibration assisted chemical mechanical polishing (MA-CMP) and traditional CMP respectively. Experimental results indicate that the surface roughness Ra was reduced from 0.072 μm to 0.020 μm in coarse polishing by using MA-CMP. And the PV value of flatness of silicon wafer is 21 μm and 28 μm with and without megasonic assistance, respectively. It is clear that the use of MA-CMP has the potential to facilitate better polished surface quality and polishing uniformity than using traditional CMP in the same situation.

参考文献/References

备注/Memo

备注/Memo:
收稿日期: 2017-08-21. 基金项目: 辽宁省科学技术计划资助项目(2015020159);辽宁省教育厅高校基本科研业务费资助项目(JL201615408). 作者简介: 翟科(1990—),男,硕士研究生. 通讯作者: 何勍,教授,qinghe118@sina.com.
更新日期/Last Update: 2017-12-21