|本期目录/Table of Contents|

 Design of Fluxgate CMOS Interface Circuit(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2013年2期
页码:
146-151
栏目:
精密测量
出版日期:
2013-03-15

文章信息/Info

Title:
 磁通门CMOS接口电路设计
作者:
 Dong Changchun1 Chen Weiping2 Ren Mingyuan12 Liu Xiaowei2 Zhou Zhiping2
 1. Department of Integrated Circuits Design and Integrated Systems, Harbin University of Science and Technology,
Harbin 150001 ,China; 2. Department of Microelectronics Science and Technology, Harbin Institute of Technology,
Harbin 150001, China
Author(s):
 董长春1 陈伟平2 任明远12 刘晓为2 周治平2
 1. 哈尔滨理工大学集成电路设计与集成系统系,哈尔滨150001;
2. 哈尔滨工业大学微电子科学与技术系,哈尔滨150001
关键词:
 fluxgate with three tips CMOS closed loop feedback-bridge circuit
Keywords:
 三端式磁通门 CMOS 闭环 反馈桥电路
分类号:
-
DOI:
-
文献标识码:
A
摘要:
 A novel CMOS interface circuit that has driving and detecting functions is presented to
achieve the integration of interface circuit of fluxgate with three tips. The driving circuit adopts the
switch network and negative feedback loop for fully differential drive in substitution for traditional cen-
tertapped transformer, balances the voltage signal on driving electrodes in real time and suppresses the
influence of power supply drift and temperature variation. The detecting circuit uses switched demodu-
lation based on the double frequency of driving signal to extract the second harmonics and adopts
closed loop detection to improve the linearity of system. The whole circuitry is realized with 0.5 μm
CMOS technology and its testing results show that this kind of miniature fluxgate magnetometer (the
fluxgate with three tips and CMOS interface circuit) has a sensitivity of 30.8 μV/nT and a linearity er-
ror of 0.62%, in which the power supply is 10 V and the power consumption is 100 mW. The area of
the chip is merely 15.54 mm2.
Abstract:
 为实现三端式磁通门接口电路的集成,提出一种新颖的包括驱动和检测功能的磁通门CMOS接口电路. 驱动
电路采用开关网络和负反馈环实现全差分驱动来替代传统的隔离变压器驱动, 通过实时平衡驱动电极上的电压信
号来抑制电源电压的漂移以及温度变化的影响. 检测电路利用驱动信号二倍频为基准的开关相敏解调实现二次谐
波提取,同时采用闭环检测,以提高系统线性度. 该电路基于0.5 μm CMOS 工艺实现. 测试结果表明,该微型磁通门
磁力计(三端式探头和CMOS接口电路)的灵敏度为30.8 μV/nT,非线性度为0.62%,电源电压为10 V,功耗为100 mW,
芯片面积仅为15.54 mm2.

参考文献/References

备注/Memo

备注/Memo:
更新日期/Last Update: 2013-03-25