|本期目录/Table of Contents|

 Design of Millimeter-Wave DC-Contact Series MEMS Switch(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2012年4期
页码:
318-321
栏目:
微机电系统
出版日期:
2012-07-15

文章信息/Info

Title:
 毫米波串联接触式MEMS开关的设计
作者:
 HOU Zhihao1 ZHU Feng1 YU Yuanwei123 ZHU Jian12
 (1. Nanjing Electronic Devices Institute, Nanjing 210016, China;
2. National Key Laboratory of Monolithic Integrated Circuits and Modules, Nanjing 210016, China;
3. School of Electronic Science and Engineering, Nanjing University, Nanjing 210032, China)
Author(s):
 侯智昊1 朱锋1 郁元卫123 朱健12
 (1. 南京电子器件研究所, 南京210016;
2. 微波毫米波单片集成电路和模块重点实验室, 南京210016;
3. 南京大学电子科学与工程学院, 南京210032)
关键词:
 RF MEMS switch DC-contact millimeter wave
Keywords:
 RF MEMS 开关串联接触式毫米波
分类号:
-
DOI:
-
文献标识码:
A
摘要:
 A DC-contact series RF MEMS switch for millimeter-wave application was presented. To obtain high isolation in millimeter wave band, the in- and out-port of the switch was designed as long and thin shape which reduced the coupling capacitance between the in- and out-port. To obtain high contact stability and reduce pull-down voltage, an improved crab-shape structure was used as the bridge structure. The RF MEMS switch was fabricated with gold surface microfabrication process in the Nanjing Electronic Devices Institute. The measurement result showed that the insertion loss was -0.3 dB at 30 GHz, and the isolation was -20 dB at 30 GHz. In the range of 20—40 GHz, the insertion loss was better than -0.5 dB, and the isolation was better than -20 dB.
Abstract:
 设计并制造了一种应用于毫米波波段的串联接触式RF MEMS 开关.为了在毫米波波段获得较高的隔离度, 在RF MEMS 开关的输入、输出端口使用细长型的接触端,以降低输入、输出端口的耦合电容.为了获得较高的接触可靠性并降低开关的开启电压,RF MEMS 开关上电极结构使用蟹形梁结构.该RF MEMS 开关利用南京电子器件研究所微纳米研发部的金表面工艺制备.所获得的RF MEMS 开关,在30 GHz 频率下,其插入损耗为-0.3 dB,隔离度为-20 dB.在20~40 GHz 的频率范围内,其插入损耗均优于-0.5 dB,隔离度均优于-20 dB.

参考文献/References

备注/Memo

备注/Memo:
更新日期/Last Update: 2012-11-14