|本期目录/Table of Contents|

 Bonding Strength at Micro and Nano Levels(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2012年6期
页码:
481-485
栏目:
纳米技术
出版日期:
2012-11-15

文章信息/Info

Title:
微纳米级键合强度分析
作者:
 RUAN Yong1 YOU Zheng1 ZHANG Da-Cheng2
 1. Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China;
2. Institute of Microelectronics, Peking University, Beijing 100871, China
Author(s):
阮勇1尤政1张大成2
 1. 清华大学精密仪器与机械学系,北京100084; 2. 北京大学微电子所,北京100871
关键词:
 MEMS anodic bonding bonding strength
Keywords:
MEMS阳极键合键合强度
分类号:
TN304
DOI:
-
文献标识码:
A
摘要:
This paper focuses on micro and nano bonding technology and bonding strength. The micro
electro mechanical system (MEMS) models were set up and improved. A series of single crystal can-
tilever beams were designed, fabricated and tested for the maximum shear stress and pressure stress
measurement of bonding strength at micro or nano levels. The formula and ANSYS simulation results
are consistent with the experimental ones. Bonding strength can be considered as two parts: torsional
strength and pressure stress. The maximum torsional strength is 1.9 ×109 μN·μm and the maximum
pressure stress is 68.3 MPa.
Abstract:
 本文主要研究了微米/纳米尺度的键合技术和键合强度,给出并发展了基于MEMS技术的微米/纳米键合分析
模型.为提取微米/纳米键合面积的最大剪应力和压应力,设计、制备和测试了一系列单晶硅悬臂梁结构.并使用理论
公式和ANSYS有限元模拟对实验结果进行了分析. 键合强度可以分为扭转和剪压表征两部分.根据测试值可得,最大
抗扭强度为1.9×109 μN·μm,最大压应力为68.3 MPa.

参考文献/References

备注/Memo

备注/Memo:
 收稿日期:
基金项目:
作者简介:
通讯作者:
2011-10-17.
教育部高等学校博士学科点专项科研基金资助项目(20091011292);清华大学精密测试国家重点实验室基金资助项目.
阮勇(1975— ),男,博士,助理研究员.
阮勇,ruanyong@mail.tsinghua.edu.cn.
更新日期/Last Update: 2013-02-25