|本期目录/Table of Contents|

 Silicon Dioxide Film Deposited by Plasma Enhanced Chemical Vapor Deposition at Low Temperature(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2013年2期
页码:
185-190
栏目:
精密加工
出版日期:
2013-03-15

文章信息/Info

Title:
 PECVD法低温制备二氧化硅薄膜
作者:
 Li Dongling123 Shang Zhengguo123 Wen Zhiyu123 Wang Shengqiang123
 (1. Key Laboratory of Fundamental Science on Micro/Nano-Device and System Technology, Chongqing University,
Chongqing 400044, China; 2. National Center for International Research of Micro/Nano-System and New Material
Technology, Chongqing University, Chongqing 400044, China; 3. Microsystem Research Center, Chongqing University,
Chongqing 400044, China)
Author(s):
 李东玲1 2 3 尚正国1 2 3 温志渝1 2 3 王胜强1 2 3
 (1. 重庆大学新型微纳器件与系统技术国防重点学科实验室,重庆400044; 2. 重庆大学国家级微纳系统与新材料
技术国际研发中心,重庆400044; 3. 重庆大学微系统研究中心,重庆400044)
关键词:
 silicon dioxide plasma enhanced chemical vapor deposition(PECVD) refractive index
uniformity
stress
Keywords:
 二氧化硅等离子增强型化学气相沉积(PECVD)折射率均匀性应力
分类号:
-
DOI:
-
文献标识码:
A
摘要:
 To meet the demand of inter-metal dielectric(IMD) layers and micro electro mechanical
systems(MEMS), silicon dioxide(SiO2) films were deposited by plasma enhanced chemical vapor de-
position (PECVD) at low temperature with silane(SiH4) and nitrous oxide (N2O) as precursor gases.
The ellipsometer and stress measurement system were used to test the thickness, refractive index, uni-
formity and stress of the SiO2 film fabricated, and the effects of ratio frequency (RF) power, chamber
pressure and N2O/SiH4 flow ratio on the properties of SiO2 film were studied. The results show that the
refractive index of SiO2 film is mainly determined by N2O/SiH4 flow ratio and the uniformity of the film
is influenced by the distance between electrodes and the chamber pressure. Moreover, by optimizing
the process parameters, the SiO2 films were deposited at 260 ℃, with the refractive index measured as
1.45—1.52, the uniformity of ±0.64%,and the stress effectively controlled within -350—-16 MPa. The
deposited SiO2 films have good uniformity, compact structure, high deposition rate, low deposition
temperature and controllable stress, which can be widely used in integrated circuit(IC) and MEMS de-
vices.
Abstract:
 针对金属层间介质以及MEMS等对氧化硅薄膜的需求,介绍了采用等离子增强型化学气相沉积(PECVD)技
术,以SiH4和N2O为反应气体,低温制备SiO2薄膜的方法. 利用椭偏仪和应力测试系统对制得的SiO2薄膜的厚度、折射
率、均匀性以及应力等性能指标进行了测试,探讨了射频功率、反应腔室压力、气体流量比等关键工艺参数对SiO2薄
膜性能的影响. 结果表明:SiO2薄膜的折射率主要由N2O/SiH4的流量比决定,而薄膜均匀性主要受电极间距以及反应
腔室压力的影响. 通过优化工艺参数,在低温260 ℃下制备了折射率为1.45~1.52、均匀性为±0.64%、应力在-350~-16
MPa可控的SiO2薄膜. 采用该方法制备的SiO2薄膜均匀性好、结构致密、沉积速率快、沉积温度低且应力可控,可广泛
应用于集成电路以及MEMS器件中.

参考文献/References

备注/Memo

备注/Memo:
更新日期/Last Update: 2013-03-25