|本期目录/Table of Contents|

 4H-SiC MEMS高温电容式压力敏感元件设计(PDF)

《纳米技术与精密工程》[ISSN:1672-6030/CN:12-1351/O3]

期数:
2015年3期
页码:
179-185
栏目:
微机电系统
出版日期:
2015-05-15

文章信息/Info

Title:
 Design of MEMS High-Temperature Capacitance
Pressure Sensor Based on 4H-SiC
作者:
 曹正威 尹玉刚 许姣 张世名 邹江波
 航天长征火箭技术有限公司, 北京 100076
Author(s):
 Cao Zhengwei Yin Yugang Xu Jiao Zhang Shiming Zou Jiangbo
 Aerospace Long March Launch Vehicle Technology Company, Beijing 100076,China
关键词:
 4H-SiCMEMS高温压力传感器设计仿真高温测试
Keywords:
 4H-SiC MEMS high-temperature pressure sensor design simulation high-temperature test
分类号:
TP212.1
DOI:
10.13494/j.npe.20150008
文献标识码:
A
摘要:
 为了研制SiC高温电容式MEMS压力敏感元件以满足高温环境下压力参数测量,设计了一种基于P型4H-SiC减薄抛光工艺制备高温变间隙电容式压力传感器敏感元件结构方法;通过数值仿真,研究了敏感元件的性能,得到敏感元件输出电容随压力、温度的变化曲线;通过微机械加工工艺制备出了SiC电容式高温压力传感器敏感元件,研制出SiC电容式高温压力传感器原理样机,通过模拟高温压力传感器样机工作环境,搭建了高温微压测试平台并对原理样机进行性能测试;结果显示,样机在873.15 K下能够正常工作,灵敏度为18.7 fF/kPa, 非线性为12.60%,迟滞为0.47%,能够满足解调电路拾取压力信号.
Abstract:
 A MEMS capacitance pressure sensitive element based on wafer thinning process of P type 4H-SiC for hightemperature applications was presented and its performance was studied via numerical simulation. The output capacitance curves of the element versus pressure and temperature were obtained. The SiC capacitance pressure sensitive element was developed and fabricated with MEMS technology. Finally, the prototype sensor’s performance was tested by the calibration system, which was established to simulate the sensor’s working environment. Test results indicate that the prototype sensor can work under 873.15 K, at which point the sensitivity of the sensor is 18.7 fF/kPa, the nonlinearity is 12.60% and the hysteresis is 0.47%,and the performance parameters are good enough for demodulation circuitry to pick up the pressure signal.

参考文献/References

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备注/Memo

备注/Memo:
收稿日期: 2015-03-05.
作者简介: 曹正威(1990—), 男, 助理工程师.
通讯作者: 邹江波, 研究员, zoujiangbo@hotmail.com.
更新日期/Last Update: 2015-05-22